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STM32F101XC Datasheet(PDF) 76 Page - STMicroelectronics

Part # STM32F101XC
Description  High-density access line, ARM-based 32-bit MCU with 256 to 512 KB Flash, 9 timers, 1 ADC and 10 communication interfaces
PDF  106 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101XC Datasheet(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
STM32F101xC, STM32F101xD, STM32F101xE
76/106
Doc ID 14610 Rev 7
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
5.3.12
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 42.
EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD 3.3 V, TA 25 °C,
LQFP144 package
compliant with
IEC 61967-2
0.1 MHz to 30 MHz
8
dBµV
30 MHz to 130 MHz
27
130 MHz to 1 GHz
26
SAE EMI Level
4
-
Table 43.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C, conforming
to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA +25 °C, conforming
to JESD22-C101
II
500
Table 44.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +85 °C conforming to JESD78A
II level A



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