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MPC5643L Datasheet(PDF) 77 Page - Freescale Semiconductor, Inc |
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MPC5643L Datasheet(HTML) 77 Page - Freescale Semiconductor, Inc |
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77 / 98 page ![]() Electrical characteristics MPC5643L Microcontroller Data Sheet, Rev. 3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 77 3.15 Flash memory electrical characteristics Table 26. Flash program and erase electrical specifications No. Symbol Parameter Min Typ1 NOTES: 1 Typical program and erase times assume nominal supply values and operation at T J =25 °C. These values are characterized, but not tested. Factory Avg2 2 Factory Average program and erase times represent the effective performance averaged over > 1024 pages or blocks, and are provided for factory throughput estimation assuming < 100 program/erase cycles, nominal supply values and operation at TJ =25 °C. These values are characterized, but not tested. Initial Max3 3 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ =25 °C. These values are verified at production test. Lifetime Max4 4 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM * 5 5 See Notes for individual specifications, as shown in column headings. Double word (64 bits) program time6 6 Actual hardware programming times. These do not include software overhead. — 39 — — 500 µs 2TPPROGRAM * 5 Page(128 bits) program time6 — 48 53 100 500 µs 3T16KPPERASE * 5 16 KB block pre-program and erase time — TBD TBD 500 5000 ms 4T48KPPERASE * 5 48 KB block pre-program and erase time — TBD TBD 750 5000 ms 5T64KPPERASE * 5 64 KB block pre-program and erase time — TBD TBD 900 5000 ms 6T128KPPERASE * 5 128 KB block pre-program and erase time — TBD TBD 1300 7500 ms 7T256KPPERASE * 5 256 KB block pre-program and erase time — TBD TBD 2600 15000 ms Table 27. Flash module life No. Symbol Parameter Value Unit Min Typ Max 1P/E C Number of program/erase cycles per block for 16 KB, 48 KB, and 64 KB blocks over the operating temperature range1 NOTES: 1 Operating temperature range is T J from –40 °C to 150 °C. Typical endurance is evaluated at 25 oC. Product qualification is performed to the minimum specification. For additional information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory. 100,000 — — cycles 2P/E C Number of program/erase cycles per block for 128 KB and 256 KB blocks over the operating temperature range1. 1,000 100,0002 (TBD) 2 Typical P/E cycles is 100,000 cycles for 128 KB and 256 KB blocks. For additional information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory. —cycles 3 Retention C Minimum data retention at 85 °C average ambient temperature3 Blocks with 0–1,000 P/E cycles Blocks with 1,001–10,000 P/E cycles Blocks with 10,001–100,000 P/E cycles 3 Ambient temperature averaged over duration of application, not to exceed product operating temperature range. 20 10 5 — — — — — — years |
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