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TPR400A Datasheet(PDF) 1 Page - Microsemi Corporation

Part # TPR400A
Description  400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

TPR400A Datasheet(HTML) 1 Page - Microsemi Corporation

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GENERAL DESCRIPTION
The TPR400A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. Low
thermal resistance packaging reduces the junction temperature and extends
device lifetime.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
875 Watts
Maximum Voltage and Current
BVces
Collector to Base Voltage
55 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
30 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 150oC
Operating Junction Temperature
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1030 &1090 MHz
Vcc = 50 Volts
PW = 10
µsec
DF = 1%
400
9.5
50
45
5:1
Watts
Watts
dB
%
BVebo
BVces
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 25 mA
Ic = 2.5 A, Vce = 5 V
4.0
55
10
100
.2
Volts
Volts
oC/W
Note 1: At rated output power and pulse conditions
Rev B – November 2009
TPR400A
400 Watts, 50 Volts, Pulsed
Avionics 1030-1090 MHz


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