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25AA512 Datasheet(PDF) 19 Page - Microchip Technology |
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25AA512 Datasheet(HTML) 19 Page - Microchip Technology |
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19 / 36 page ![]() 2010 Microchip Technology Inc. DS22021F-page 19 25AA512 2.12 RELEASE FROM DEEP POWER-DOWN AND READ ELECTRONIC SIGNATURE Once the device has entered Deep Power-Down mode all instructions are ignored except the Release from Deep Power-down and Read Electronic Signa- ture command. This command can also be used when the device is not in Deep power-down to read the electronic signature out on the SO pin unless another command is being executed such as Erase, Program or Write Status Register. Release from Deep Power-Down mode and Read Electronic Signature is entered by driving CS low, followed by the RDID instruction code (Figure 2-12) and then a dummy address of 16 bits (A15-A0). After the last bit of the dummy address is clock in, the 8-bit Electronic Signature is clocked out on the SO pin. After the signature has been read out at least once, the sequence can be terminated by driving CS high. The device will then return to Standby mode and will wait to be selected so it can be given new instructions. If additional clock cycles are sent after the electronic signature has been read once, it will continue to output the signature on the SO line until the sequence is terminated. FIGURE 2-12: RELEASE FROM DEEP POWER-DOWN AND READ ELECTRONIC SIGNATURE Driving CS high after the 8-bit RDID command but before the Electronic Signature has been transmitted will still ensure the device will be taken out of Deep Power-Down mode. However, there is a delay TREL that occurs before the device returns to Standby mode (ICCS), as shown in Figure 2-13. FIGURE 2-13: RELEASE FROM DEEP POWER-DOWN SO SI SCK CS 0 23456789 10 11 21 22 23 24 25 26 27 28 29 30 31 1 01 1 0 1 0 11 15 14 13 12 210 76543210 Instruction 16-bit Address Electronic Signature Out High-Impedance 0 101001 0 Manufacturer’s ID = 0x29 SO SI SCK CS 0 234 567 1 01 1 0 1 0 11 Instruction High-Impedance TREL |
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