K6R1016V1D

CMOS SRAM

Revision 3.0

- 4 -

June 2002

for AT&T

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.5 to 4.6

V

-0.5 to 4.6

V

Power Dissipation

1

W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Industrial

-40 to 85

°C

°C)

≤ 8ns) for I ≤ 20mA

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

3.0

3.3

3.6

V

Ground

0

0

0

V

Input High Voltage

2.0

-

V

Input Low Voltage

-

0.8

V

LB

OE

A0

A1

A2

N.C

I/O1

UB

A3

A4

CS

I/O9

I/O2

I/O3

A5

A6

I/O11

I/O10

Vss

I/O4

N.C

A7

I/O12

Vcc

Vcc

I/O5

N.C

N.C

I/O13

Vss

I/O7

I/O6

A14

A15

I/O14

I/O15

I/O8

N.C

A12

A13

WE

I/O16

N.C

A8

A9

A10

A11

N.C

1

2

3

4

5

6

A

B

C

D

E

F

G

H

PIN CONFIGURATION(TOP VIEW)

SOJ/

TSOP2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

OE

UB

LB

Vss

Vcc

N.C

N.C

CS

Vcc

Vss

WE

N.C

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23