| Electronic Components Datasheet Search |
|
K6R1016C1D Datasheet(PDF) 8 Page - Samsung semiconductor |
|
|
|||||||||||||||||||||||||||||
K6R1016C1D Datasheet(HTML) 8 Page - Samsung semiconductor |
|
8 / 11 page ![]() K6R1016V1D CMOS SRAM Revision 3.0 - 8 - June 2002 for AT&T TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled) Address CS tAW tDW tDH Valid Data WE Data in Data out High-Z High-Z(8) UB, LB tCW(3) tWP(2) tAS(4) tWC tWR(5) High-Z High-Z tLZ tWHZ(6) tBW TIMING WAVEFORM OF WRITE CYCLE(2) (OE =Low fixed) Address CS UB, LB WE Data in Data out tWC tCW(3) tBW tWP1(2) tDH tDW tWR(5) tAS(4) tOW tWHZ(6) (10) (9) High-Z Valid Data tAW High-Z |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |