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MPC5604B Datasheet(PDF) 45 Page - Freescale Semiconductor, Inc |
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MPC5604B Datasheet(HTML) 45 Page - Freescale Semiconductor, Inc |
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45 / 106 page ![]() Electrical characteristics MPC5604B/C Microcontroller Data Sheet, Rev. 8 Freescale Semiconductor 45 4.7.5 I/O pad current specification The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a VDD/VSS supply pair as described in Table 17. Table 18 provides I/O consumption figures. In order to ensure device reliability, the average current of the I/O on a single segment should remain below the IAVGSEG maximum value. In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single segment should remain below the IDYNSEG maximum value. 2 C L includes device and package capacitances (CPKG < 5 pF). Table 17. I/O supply segment Package Supply segment 12 345 6 208 MAPBGA1 1 208 MAPBGA available only as development package for Nexus2+ Equivalent to 144 LQFP segment pad distribution MCKO MDOn/MSEO 144 LQFP pin20–pin49 pin51–pin99 pin100–pin122 pin 123–pin19 — — 100 LQFP pin16–pin35 pin37–pin69 pin70–pin83 pin 84–pin15 — — 64 LQFP2 2 All 64 LQFPinformation is indicative and must be confirmed during silicon validation. pin8–pin26 pin28–pin55 pin56–pin7 — — — Table 18. I/O consumption Symbol C Parameter Conditions1 Value Unit Min Typ Max ISWTSLW ,2 CC D Dynamic I/O current for SLOW configuration CL = 25 pF VDD = 5.0 V ± 10%, PAD3V5V = 0 —— 20 mA VDD = 3.3 V ± 10%, PAD3V5V = 1 —— 16 ISWTMED 2 CC D Dynamic I/O current for MEDIUM configuration CL = 25 pF VDD = 5.0 V ± 10%, PAD3V5V = 0 —— 29 mA VDD = 3.3 V ± 10%, PAD3V5V = 1 —— 17 ISWTFST 2 CC D Dynamic I/O current for FAST configuration CL = 25 pF VDD = 5.0 V ± 10%, PAD3V5V = 0 —— 110 mA VDD = 3.3 V ± 10%, PAD3V5V = 1 —— 50 |
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