SSD02N65 datasheet(1/4 Pages) SECOS

Part #	SSD02N65

Description	2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET

PDF	4 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 4 page

SSD02N65

2A , 650V , RDS(ON) 8

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

24-Nov-2011 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

D

N

O

P

G E

F

H

K

J

M

B

TO-252(D-Pack)

2N65

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD02N65 is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications .

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current @VGS=10V

1

TC=25°C

ID

2

A

TC=100°C

1.3

A

Pulsed Drain Current

2

IDM

4

A

Total Power Dissipation

4

TC=25°C

P D

40

W

Linear Derating Factor

0.33

W / °C

Single Pulse Avalanche Energy

3

EAS

16

mJ

Single Pulse Avalanche Current

IAS

3.4

A

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

1

RθJA

62

°C / W

Maximum Thermal Resistance Junction-Case

1

RθJC

3

°C / W

1

Gate

3

Source

2

Drain

Date Code

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

6.35

6.80

J

2.30 REF.

B

5.20

5.50

K

0.64

0.90

C

2.15

2.40

M

0.50

1.1

D

0.45

0.58

N

0.9

1.65

E

6.8

7.5

O

0

0.15

F

2.40

3.0

P

0.43

0.58

G

5.40

6.25

H

0.64

1.20

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