SSD02N65 datasheet(2/4 Pages) SECOS

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SSD02N65

2A , 650V , RDS(ON) 8

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

24-Nov-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

650

VGS=0, ID= 250µA

Breakdown Voltage Temperature Coefficient △BVDSS /△TJ

0.37

V/°C

Reference to 25°C,

ID=1mA

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Forward Transconductance

gfs

1.7

VDS=10V, ID=1.0A

Gate-Source Leakage Current

IGSS

±100

VGS= ±30V

Drain-Source Leakage Current

IDSS

µA

VDS=520V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

6.3

VGS=10V, ID=1A

Total Gate Charge

ID=1A

VDS=520V

VGS=10V

Gate-Source Charge

Qgs

2.56

Gate-Drain (“Miller”) Change

Qgd

2.67

Turn-on Delay Time

Td(on)

4.8

VDD=300V

ID=1A

VGS=10V

RG=10

Rise Time

18.4

Turn-off Delay Time

Td(off)

10.8

Fall Time

23.2

Input Capacitance

Ciss

290

VGS =0

VDS=25 V

f =1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

EAS

3.2

VDD=50V,L=1mH , IAS=1.5A

Source-Drain Diode

Diode Forward Voltage

VSD

IS=1A, VGS=0, Tj=25°C,

Continuous Source Current

1,6

VD=VG=0, VS =1V

Pulsed Source Current

2,6

ISM

Notes:

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%

The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=1.5A

The power dissipation is limited by 150°C, junction temperature

The Min. value is 100% EAS tested guarantee.

The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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