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MPC5744P Datasheet(PDF) 85 Page - Freescale Semiconductor, Inc |
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MPC5744P Datasheet(HTML) 85 Page - Freescale Semiconductor, Inc |
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85 / 114 page  Electrical characteristics MPC5744P Data Sheet, Rev. 0.3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 85 3.15 Flash memory electrical characteristics Input (double ADC channel) CC D Max leakage 150C — — 300 nA CC D Max positive/negative injection |Vref_ad0 - Vref_ad1| < 150 mV –3.6 — 3.6 mA SNR CC T Signal-to-noise ratio VREF = 3.3 V, Fin < 125 kHz 67 — — dB SNR CC T Signal-to-noise ratio VREF = 5.0 V, Fin < 125 kHz 69 — — dB THD CC T Total harmonic distortion @ 125 kHz TBD — — dB SINAD CC T Signal-to-noise and distortion Fin < 125 kHz 65 — — dB ENOB CC T Effective number of bits Fin < 125 kHz 10.5 — — bits TUEIS1WINJ CC D Total unadjusted error for IS1WINJ Without current injection –6 — 6 LSB TUEIS1WWINJ CC D Total unadjusted error for IS1WWINJ Without current injection –6 — 6 LSB NOTES: 1 V DD_HV_IOx = 3.3 V -5%,+10%, TJ = –40 to +165 °C, unless otherwise specified, and analog input voltage from VAGND to VAREF. 2 AD_CK clock is always half of the ADC module input clock defined via the auxiliary clock divider for the ADC. 3 During the sample time the input capacitance C S can be charged/discharged by the external source. The internal resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tsample depend on programming. 4 This parameter does not include the sample time t sample, but only the time for determining the digital result and the time to load the result register with the conversion result. 5 See Figure 29. 6 For the 144-pin package 7 No missing codes Table 33. Flash memory program and erase specifications Symbol Characteristic Typ1,2 Initial Max 25C3 Initial Max All Temps4 Lifetime Max5 Unit tdwprogram Double Word (64 bits) Program Time6 25 100 — 500 μs tpprogram Page (256 bits) Program Time7 53 200 — 500 μs tqprogram Quad-Page (1024 bits) Program Time8 203 800 1,200 2,000 μs t16kpperase 16 KB Block Pre-program and Erase Time 225 1,000 1,500 5,000 ms t32kpperase 32 KB Block Pre-program and Erase Time 250 1,000 1,500 5,000 ms t64kpperase 64 KB Block Pre-program and Erase Time 325 1,000 1,500 5,000 ms t256kpperase 256 KB Block Pre-program and Erase Time 695 2,000 3,000 15,000 ms tfactory256kp perase 256 KB Block Factory pre-program and Erase Time 510 1,500 2,250 n/a ms Table 32. ADC conversion characteristics (continued) Symbol C Parameter Conditions1 Min Typ Max Unit |
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