MPC5643L datasheet(100/136 Pages) FREESCALE

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MPC5643L Microcontroller Data Sheet, Rev. 8.1

Electrical characteristics

Freescale Semiconductor

100

Table 27. Flash memory timing

Symbol

Parameter

Value

Unit

Min

Typ

Max

TRES

D Time from clearing the MCR-ESUS or PSUS bit with EHV = 1

until DONE goes low

—

100

TDONE

D Time from 0 to 1 transition on the MCR-EHV bit initiating a

program/erase until the MCR-DONE bit is cleared

——

TPSRT

D Time between program suspend resume and the next program

suspend request.1

1 Repeated suspends at a high frequency may result in the operation timing out, and the flash module will

respond by completing the operation with a fail code (MCR[PEG] = 0), or the operation not able to finish

(MCR[DONE] = 1 during Program operation). The minimum time between suspends to ensure this does not

occur is TPSRT.

100

—

TESRT

D Time between erase suspend resume and the next erase

suspend request.2

2 If Erase suspend rate is less than T

ESRT, an increase of slope voltage ramp occurs

during erase pulse. This improves erase time but reduces cycling figure due to

overstress

Table 28. Flash memory module life

No.

Symbol

Parameter

Value

Unit

Minimu

Typical

Maximum

P/E

C Number of program/erase cycles per block for 16 KB, 48 KB,

and 64 KB blocks over the operating temperature range1

1 Operating temperature range is T

J from –40 °C to 150 °C. Typical endurance is evaluated at 25 C. Product qualification

is performed to the minimum specification. For additional information on the Freescale definition of Typical Endurance,

please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.

100000

—

cycles

P/E

C Number of program/erase cycles per block for 128 KB and

256 KB blocks over the operating temperature range1

1000

1000002

2 Typical P/E cycles is 100,000 cycles for 128 KB and 256 KB blocks. For additional information on the Freescale

definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.

—

cycles

Retention C Minimum data retention at 85 °C average ambient temperature3

Blocks with 0–1,000 P/E cycles

Blocks with 1,001–10,000 P/E cycles

Blocks with 10,001–100,000 P/E cycles

3 Ambient temperature averaged over duration of application, not to exceed product operating temperature range.

—

years



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