©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5180

FEATURES

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

Embossed tape, 8 mm wide, pins No. 3

2SC5180–T1

(base) and No. 4 (emitter) facing the

3 000 units/reel

perforations

Embossed tape, 8 mm wide, pins No. 1

2SC5180–T2

(collector) and No. 2 (emitter) facing the

perforations

* Contact your NEC sales representatives to order samples for evaluation (available

in batches of 50).

Collector to Base Voltage

5V

Collector to Emitter Voltage

3V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

30

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

1.25 ± 0.1

2.1 ± 0.2

PACKAGE DIMENSIONS

(Units : mm)

1. Collector

2. Emitter

3. Base

4. Emitter

PIN CONNECTIONS

NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12104EJ2V0DS00 (2nd edition)

(Previous No. TC-2477)

Date Published December 1996 N

Printed in Japan