2SC4536_15 datasheet(4/9 Pages) RENESAS

Part #	2SC4536

Description	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 9 page

Data Sheet PU10338EJ01V0DS

2SC4536

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0 mA

–

5.0

µA

Emitter Cut-off Current

IEBO

VEB = 2 V, IC = 0 mA

–

5.0

µA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 50 mA

–

200

–

RF Characteristics

Insertion Power Gain

S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz

5.5

7.2

–

Noise Figure (1)

Note 2

VCE = 10 V, IC = 50 mA, f = 500 MHz

–

1.5

–

Noise Figure (2)

Note 2

VCE = 10 V, IC = 50 mA, f = 1 GHz

–

2.0

–

2nd Order Intermoduration Distortion

IM2

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω,

VO = 105 dB

µV/75 Ω, f1 = 190 MHz,

f2 = 90 MHz, f = f1

− f2

–

59.0

–

dBc

3rd Order Intermoduration Distortion

IM3

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω,

VO = 105 dB

µV/75 Ω, f1 = 190 MHz,

f2 = 200 MHz, f = 2

× f1 − f2

–

82.0

–

dBc

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. RS = RL = 50

Ω, tuned

hFE CLASSIFICATION

Rank

Marking

hFE Value

60 to 120

100 to 200

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