DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC4536

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

The mark

•

•

•

• shows major revised points.

Document No. PU10338EJ01V0DS (1st edition)

(Previous No. P10369EJ2V1DS00)

Date Published May 2003 CP(K)

Printed in Japan

©

©

©

DESCRIPTION

The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier.

It features

excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it

employs plastic surface mount type package (SOT-89).

FEATURES

2

× 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4536

25 pcs (Non reel)

• 12 mm wide embossed taping

2SC4536-T1

1 kpcs/reel

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

30

V

Collector to Emitter Voltage

15

V

Emitter to Base Voltage

3.0

V

Collector Current

250

mA

Total Power Dissipation

Note

2.0

W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on double-sided copper-clad 16 cm

2

× 0.7 mm (t) ceramic substrate