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2SC4536 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC4536
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4536 Datasheet(HTML) 5 Page - Renesas Technology Corp

  2SC4536_15 Datasheet HTML 1Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 2Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 3Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 4Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 5Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 6Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 7Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 8Page - Renesas Technology Corp 2SC4536_15 Datasheet HTML 9Page - Renesas Technology Corp  
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Data Sheet PU10338EJ01V0DS
3
2SC4536
TYPICAL CHARACTERISTICS (TA = +25
°°°°C)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
0
10
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
VCE = 10 V
IC = 50 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
20
10
0
0.1
0.2
0.3
0.5
1
2
3
MAG
Gmax (u)
|S21e|
2
f = 1 MHz
IE = 0 mA
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
2
0.2
1
0.5
1
5
10
30
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
100
300
10
550
30
VCE = 10 V
VCE = 10 V
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
30
10
100
0.1
1
10
1 000
500
400
1 000
1 500
2 000
2 500
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ceramic Substrate
16 cm2
× 0.7 mm (t)
Rth (j-a) 62.5˚C/W
Free Air
Rth (j-a) 312.5˚C/W



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