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BCX51_52_53 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # BCX51_52_53
Description  PNP MEDIUM POWER TRANSISTORS IN SOT89
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BCX51_52_53 Datasheet(HTML) 2 Page - Diodes Incorporated

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BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 7 - 2
2 of 7
www.diodes.com
June 2015
© Diodes Incorporated
BCX51/ 52/ 53
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BCX51
BCX52
BCX53
Unit
Collector-Base Voltage
VCBO
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Collector Current
ICM
-2
Continuous Base Current
IB
-100
mA
Peak Pulse Base Current
IBM
-200
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
1
W
(Note 7)
1.5
(Note 8)
2.0
Thermal Resistance, Junction to Ambient Air
(Note 6)
RθJA
125
°C/W
(Note 7)
83
(Note 8)
60
Thermal Resistance, Junction to Lead
(Note 9)
RθJL
13
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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