L9779WD datasheet(93/170 Pages) STMICROELECTRONICS

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L9779WD

Functional description

169

K_LINE

VKOUTL

Transmitter output low

voltage

Isink_K_LINE = 35 mA,

K_TX = Low

-1

1.5

IKOS

Transmitter short

circuit current

K_LINE = VB, K_TX = Low

165

Tfilter_K_LINE Overcurrent filter time Test by SCAN

µs

IKREV

Reverse battery or

GND loss current

Key_on = VB = 0 V

K_LINE = -18 V

Under voltage current

Key_on = High,

K_TX = Low, VB = 13.5 V,

K_LINE = -1V

VKH

Receiver input

hysteresis

0.08*VB

0.3*VB

VKINH

Receiver input high

voltage

-0.7* VB

VKINL

Receiver input low

voltage

-1

0.35*VB

VK_SR

K_line voltage slew -

rate

From off to on:

VB = 13.5 V, Rext = 510 Ω

C = 10 nF to GND

5.3

8.8

V/µs

From on to off

Depends on external RC

load

T_fT

Transmitter fall time

CK_LINE = 10 nF,

RK_LINE = 510 Ω

µs

K_RX

VKRXL

K_RX output low

voltage

VDD_IO = 5 V or 3.3 V

Isink = 2 mA

0.5

VKRXH

K_RX output high

voltage

VDD_IO = 5 V or 3.3 V

Isource = 2 mA

VDD_IO

-0.5

T_rK

K_RX rise time

from 10% to 90%

With 20 pF capacitive load

µs

T_fK

K_RX fall time

from 90% to 10%

20 pF capacitive load

µs

K_TX,

K_LINE

Tp_HLT

Transmitter turn-on

delay time

CK_LINE = 10 nF,

RK_LINE = 510 Ω

µs

K_LINE,

K_RX

TpHLK

K_RX turn-on delay

time

Cload = 20 pF

µs

TpLHK

K_RX turn-off delay

time

Cload = 20 pF

µs

Table 41. ISO serial line (K-LINE) functionality electrical characteristics (continued)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

L9779WD Datasheet(PDF) 93 Page - STMicroelectronics

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