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SST25VF080B Datasheet(PDF) 14 Page - Microchip Technology

Part # SST25VF080B
Description  8 Mbit SPI Serial Flash
PDF  32 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25VF080B Datasheet(HTML) 14 Page - Microchip Technology

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SST25VF080B
DS20005045C-page 14
 2015 Microchip Technology Inc.
4.4.9
CHIP-ERASE
The Chip-Erase instruction clears all bits in the device
to FFH. A Chip-Erase instruction will be ignored if any
of the memory area is protected. Prior to any Write oper-
ation, the Write-Enable (WREN) instruction must be exe-
cuted. CE# must remain active low for the duration of
the Chip-Erase instruction sequence. The Chip-Erase
instruction is initiated by executing an 8-bit command,
60H or C7H. CE# must be driven high before the instruction
is executed. The user may poll the Busy bit in the software
status register or wait TCE for the completion of the
internal self-timed Chip-Erase cycle. See Figure 4-13
for the Chip-Erase sequence.
FIGURE 4-13:
CHIP-ERASE SEQUENCE
4.4.10
READ-STATUS-REGISTER (RDSR)
The Read-Status-Register (RDSR) instruction allows
reading of the status register. The status register may
be read at any time even during a Write (Program/
Erase) operation. When a Write operation is in prog-
ress, the Busy bit may be checked before sending any
new commands to assure that the new commands are
properly received by the device. CE# must be driven
low before the RDSR instruction is entered and remain
low until the status data is read. Read-Status-Register
is continuous with ongoing clock cycles until it is termi-
nated by a low to high transition of the CE#. See Figure
4-14 for the RDSR instruction sequence.
FIGURE 4-14:
READ-STATUS-REGISTER (RDSR) SEQUENCE
CE#
SO
SI
SCK
01 2 3 4 5 6 7
60 or C7
HIGH IMPEDANCE
MODE 0
MODE 3
1296 ChEr.0
MSB
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1296 RDSRseq.0
MODE 3
SCK
SI
SO
CE#
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
05
MODE 0
HIGH IMPEDANCE
Status
Register Out
MSB
MSB



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