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NSC800 Datasheet(PDF) 72 Page - National Semiconductor (TI) |
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NSC800 Datasheet(HTML) 72 Page - National Semiconductor (TI) |
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72 / 76 page  140 NSC800M883B MIL-STD-833 Class C Screening National Semiconductor offers the NSC800D and NSC800E with full class B screening per MIL-STD-883 for Military Aerospace programs requiring high reliability In addition this screening is available for all of the key NSC800 periph- eral devices Electrical testing is performed in accordance with RESTS800X which tests or guarantees all of the electrical performance characteristics of the NSC800 data sheet A copy of the current revision of RETS800X is available upon request 100% Screening Flow Test MIL-STD-883 MethodCondition Requirement Internal Visual 2010B 100% Stabilization Bake 1008 C 24 Hrs a 150 C 100% Temperature Cycling 1010 C 10 Cycles b65 C a150 C 100% Constant Acceleration 2001 E 30000 G’s Y1 Axis 100% Fine Leak 1014 A or B 100% Gross Leak 1014C 100% Burn-In 1015 160 Hrs a 125 C (using 100% burn-in circuits shown below) Final Electrical a 25 C DC per RETS800X 100% PDA 10% Max a 125 C AC and DC per RETS800X 100% b 55 C AC and DC per RETS800X 100% a 25 C AC per RETS800X 100% QA Acceptance 5005 Sample Per Quality Conformance Method 5005 External Visual 2009 100% 150 Burn-In Circuits 5240HR NSC800D883B (Dual-In-Line) TLC5171 – 32 Top View 5241HR NSC800E883B (Leadless Chip Carrier) TLC5171 – 33 All resistors 27 kX unless marked otherwise Note 1 All resistors are W g 5% unless otherwise specified Note 2 All clocks 0V to 3V 50% duty cycle in phase with k 1 ms rise and fall time Note 3 Device to be cooled down under power after burn-in 72 |
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