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STAC3933 Datasheet(PDF) 1 Page - STMicroelectronics |
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STAC3933 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2012 Doc ID 022696 Rev 1 1/14 14 STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology - STAC® package Description The STAC3933 is an N-channel MOS field-effect RF power transistor, intended for use in 100 V DC large signal applications up to 200 MHz. Figure 1. Pin connection STAC177B 1 (drain) 2 (source) 3 (gate) 4 (source) 5 (source) on backside Table 1. Device summary Order code Marking Base qty. Package Packaging(1) STAC3933 STAC3933(1) 25 pcs STAC177B Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.. www.st.com |
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