Electrical characteristics

STL30P3LLH6

4/15

DocID023669 Rev 3

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

V

GS

= 0, I

D

= 250 μA30

V

I

DSS

Zero gate voltage

drain current

V

GS

= 0, V

DS

= 30 V

1

μA

V

GS

= 0, V

DS

= 30 V,

T

C

=125 °C

10

μA

I

GSS

Gate-body leakage

current

V

DS

= 0, V

GS

= ± 20 V

±100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA1

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 4.5 A

0.024

0.03

Ω

V

GS

= 4.5 V, I

D

= 4.5 A

0.032

0.040

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 25 V, f = 1 MHz,

V

GS

= 0

-

1450

-

pF

C

oss

Output capacitance

-

178

-pF

C

rss

Reverse transfer

capacitance

-

120

-pF

Q

g

Total gate charge

V

DD

= 24 V, I

D

= 9 A,

V

GS

= 4.5 V

-12

-

nC

Q

gs

Gate-source charge

-

4.4

-

nC

Q

gd

Gate-drain charge

-

5

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 24 V, I

D

= 4.5 A,

R

G

= 4.7

Ω, V

GS

= 10 V

-15-

ns

t

r

Rise time

-

15

-

ns

t

d(off)

Turn-off delay time

-

24

-

ns

t

f

Fall time

-

21

-

ns