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STT6N3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STT6N3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  This is information on a product in full production. March 2014 DocID023012 Rev 3 1/12 STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Figure 1. Internal schematic diagram Features • R DS(on) * Q g industry benchmark • Extremely low on-resistance R DS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. SOT23-6L 1 2 3 6 5 4 Order code VDSS RDS(on) max ID PTOT STT6N3LLH6 30 V 0.025 Ω (V GS = 10 V) 6 A 1.6 W 0.036 Ω (V GS = 4.5 V) Table 1. Device summary Order code Marking Package Packaging STT6N3LLH6 STG1 SOT23-6L Tape and reel www.st.com |
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