| Electronic Components Datasheet Search |
|
STT6N3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STT6N3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics |
|
5 / 12 page ![]() DocID023012 Rev 3 5/12 STT6N3LLH6 Electrical characteristics 12 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 6 24 A A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD =6 A, V GS = 0 - 1.1 V t rr Reverse recovery time I SD = 6 A, di/dt = 100 A/μs, V DD = 16 V, T J =150 °C Figure 15 - 10.6 - ns Q rr Reverse recovery charge - 2.8 - nC I RRM Reverse recovery current - 0.5 - A |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |