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SRK2001ATR Datasheet(PDF) 10 Page - STMicroelectronics

Part # SRK2001ATR
Description  Auto-compensation of parasitic inductance
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SRK2001ATR Datasheet(HTML) 10 Page - STMicroelectronics

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Operation description
SRK2001A
10/20
DocID029495 Rev 1
7.2
Turn-on
The turn-on logic is such that each SR MOSFET is switched on when the sensed drain-
source voltage goes below the VTH_ON threshold: to avoid false triggering of the gate driver,
an adaptive masking delay TD_On is introduced. This delay assumes a minimum value at the
high load (TD_On.min) and increases with decreasing load levels (up to TD_On.max equal to
10% of the clock cycle).
Figure 5. Typical waveforms
The aim of TD_On is to avoid a premature turn-on at lower load conditions, triggered by
capacitive currents (due to secondary side parasitic capacitance and not really related to the
current flowing through the MOSFET body diode. Figure 6 shows the effect of this parasitic:
in case at the reduced load a capacitive current spike should trigger the turn-on, there would
be a current inversion (flowing from the output capacitor toward the SR MOSFET). This
current inversion would cause a discharge of the output capacitor and consequently an
increase of the rectified current rms value, in order to balance that dis-charge; this, in turn,
would affect a bit the converter efficiency.
In case of SR MOSFETs with low parasitic capacitance, capacitive currents lasting less than
10% of the clock cycle are filtered: the gate drive of course will go high when the current
really flows through the body diode (i.e. the comparator sensing DVS1,2 signal and
referenced to the VTH_ON threshold is triggered). In case of SR MOSFETs with higher
parasitic capacitance, capacitive currents lasting more than 10% of the clock cycle cannot
be filtered by the turn-on delay and premature turn-on will be present.



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