STM8S005C6 datasheet(60/97 Pages) STMICROELECTRONICS

60 / 97 page

Electrical characteristics

STM8S005C6 STM8S005K6

60/97

DocID022186 Rev 4

9.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA. fHSE

High speed internal RC oscillator (HSI)

Figure 19. Typical HSI frequency variation vs VDD at 3 temperatures

Table 32. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of HSI oscillator

Trimmed by the

CLK_HSITRIMR register

for given VDD and TA

conditions(1)

See the application note.

1.0(2)

Accuracy of HSI oscillator

(factory calibrated)

VDD = 5 V, TA = 25 °C

VDD  5 V, 

-40 °C

T

A  85 °C

-5

tsu(HSI)

HSI oscillator wakeup

time including calibration

1.0(2)

Guaranteed by design, not tested in production.

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(3)

Data based on characterization results, not tested in production

µA

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