MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2139 is N-Channel Power MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

Drain to Source Voltage

600

V

Gate to Source Voltage

±30

V

Drain Current (DC)

±5.0

A

Drain Current (pulse)*

±20

A

35

W

2.0

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150 ˚C

Single Avalanche Current**

5.0

A

Single Avalanche Energy**

8.3

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2SK2139

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

10.0±0.3

4.5±0.2

3.2±0.2

2.7±0.2

2.5±0.1

1.3±0.2

1.5±0.2

2.54

0.7±0.1

2.54

0.65±0.1

123

1. Gate

2. Drain

3. Source

MP-45F (ISOLATED TO-220)

Body

Diode

Source

Drain

Gate

Document No. TC-2512

(O. D. No. TC-8071)

Date Published January 1995 P

Printed in Japan

©

1995

DATA SHEET