2SK2139 datasheet(2/8 Pages) NEC

2 / 8 page

2SK2139

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-state Resistance

RDS(on)

1.1

1.5

VGS = 10 V, ID = 2.5 A

Gate to Source Cutoff Voltage

VGS(off)

2.5

3.5

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs |

1.5

VDS = 10 V, ID = 2.5 A

Drain Leakage Current

IDSS

100

VDS = 600 V, VGS = 0

Gate to Source Leakage Current

IGSS

±100

VGS =

±30 V, VDS = 0

Input Capacitance

Ciss

930

VDS = 10 V

Output Capacitance

Coss

200

VGS = 0

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-On Delay Time

td(on)

VGS = 10 V

Rise Time

VDD = 150 V

Turn-Off Delay Time

td(off)

ID = 2.5 A, RG = 10

Ω

Fall Time

RL = 60

Ω

Total Gate Charge

VGS = 10 V

Gate to Source Charge

QGS

6.0

ID = 5.0 V

Gate to Drain Charge

QGD

VDD = 450 V

Diode Forward Voltage

VF(S-D)

1.0

IF = 5.0 A, VGS = 0

Reverse Recovery Time

trr

320

IF = 5.0 A

Reverse Recovery Charge

Qrr

1.4

di/dt = 50 A/

µs

UNIT

Ω

µA

µC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

VGS = 20 - 0 V

RG = 25

Ω

D.U.T.

VDD

Test Circuit 1 Avalanche Capability

PG.

RG = 10

Ω

D.U.T.

VDD

Test Circuit 2 Switching Time

PG.

IG = 2 mA

Ω

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

t = 1us

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

10 %

VGS (on)

ton

toff

td (on)

td (off)

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