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CC3235MODASF Datasheet(PDF) 40 Page - Texas Instruments |
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CC3235MODASF Datasheet(HTML) 40 Page - Texas Instruments |
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40 / 100 page  40 CC3235MODAS, CC3235MODASF SWRS233 – OCTOBER 2019 www.ti.com Submit Documentation Feedback Product Folder Links: CC3235MODAS CC3235MODASF Specifications Copyright © 2019, Texas Instruments Incorporated (1) Measurements taken at maximum TX power (2) The and system is a constant power-source system. The active current numbers scale based on the VBAT voltage supplied. (3) Typical numbers assume a VSWR of 1.5:1. (4) DTIM = 1 (5) LPDS current does not include the external serial flash. The CC3235MODAS can be configured to retain 0 KB, 64 KB, 128 KB, 192 KB, or 256 KB of SRAM in LPDS. Each 64-KB block of MCU retained SRAM increases LPDS current by 4 µA. (6) The complete calibration can take up to 17 mJ of energy from the battery over a period of 24 ms. Calibration is performed sparingly, typically when coming out of HIBERNATE and only if temperature has changed by more than 20°C. The calibration event can be controlled by a configuration file in the serial flash. Table 5-4. Current Consumption Summary (CC3235MODAS) 5 GHz RF Band TA = 25°C, VBAT = 3.6 V PARAMETER TEST CONDITIONS(1) (2) MIN TYP(3) MAX UNIT MCU ACTIVE NWP ACTIVE TX 6 OFDM 329 mA 54 OFDM 306 RX 54 OFDM 80 NWP idle connected(4) 25.2 MCU SLEEP NWP ACTIVE TX 6 OFDM 325 mA 54 OFDM 302 RX 54 OFDM 76 NWP idle connected(4) 21.2 MCU LPDS NWP active TX 6 OFDM 312 mA 54 OFDM 289 RX 54 OFDM 63 NWP LPDS(5) SRAM Retention 64 KB 120 µA 256 KB 135 NWP idle connected(4) 710 MCU SHUTDOWN MCU shutdown 1 µA MCU HIBERNATE MCU hibernate 5.5 µA Peak calibration current(6) VBAT = 3.6 V 290 mA VBAT = 3.3 V 310 VBAT = 2.7 V 310 VBAT = 2.3 V 333 |
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