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M48T36 Datasheet(PDF) 5 Page - STMicroelectronics |
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M48T36 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() Symbol Parameter Min Max Unit tPD E or W at VIH before Power Down 0 µs tF (1) VPFD (max) to VPFD (min) VCC Fall Time 300 µs tFB (2) VPFD (min) to VSO VCC Fall Time 10 µs tR VPFD(min) to VPFD (max) VCC Rise Time 10 µs tRB VSO to VPFD (min) VCC Rise Time 1 µs tREC VPFD (max) to RST High 40 200 ms Notes:1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). 2. VPFD (min) to VSO fall time of less than tFB may cause corruption of RAM data. Table 7. Power Down/Up Mode AC Characteristics (TA = 0 to 70 °C) AI01384C VCC INPUTS RST (PER CONTROL INPUT) OUTPUTS DON’T CARE HIGH-Z tF tFB tR tREC tPD tRB tDR VALID VALID (PER CONTROL INPUT) RECOGNIZED RECOGNIZED VPFD (max) VPFD (min) VSO Figure 5. Power Down/Up Mode AC Waveforms Symbol Parameter Min Typ Max Unit VPFD Power-fail Deselect Voltage (M48T36Y) 4.2 4.35 4.5 V VSO Battery Back-up Switchover Voltage 3.0 V tDR (2) Expected Data Retention Time 7 YEARS Notes: 1. All voltages referenced to VSS. 2. @ 25 °C Table 6. Power Down/Up Trip Points DC Characteristics (1) (TA =0 to 70 °C) 5/17 M48T36 |
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