BLP05H6250XRG datasheet(5/15 Pages) AMPLEON

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BLP05H6250XR_H6250XRG

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Product data sheet

Rev. 4 — 21 September 2016

5 of 15

BLP05H6250XR; BLP05H6250XRG

Power LDMOS transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLP05H6250XR and BLP05H6250XRG are capable of withstanding a load mismatch

corresponding to VSWR > 65 : 1 through all phases under the following conditions:

VDS =50 V; IDq =100 mA; PL = 250 W pulsed; f = 108 MHz.

7.2 Impedance information

7.3 UIS avalanche energy

For information see application note AN10273.

Fig 3.

Definition of transistor impedance

Table 9.

Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL =250 W.

(MHz)

(

)

(

)

108

15.9

 49.8j

15.3 + 3.5j

001aan207

gate 1

gate 2

drain 2

drain 1

Table 10.

Typical avalanche data per section

Tamb = 25 C; typical test data; test jig without water cooling.

IAS

EAS

(A)

(J)

81.4

91.0

0.8

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