Datasheet

19

Rev. 1.20

2022-04-27

TLE7258

LIN transceiver

Electrical characteristics

5

Electrical characteristics

5.1

Functional device characteristics

Table 6

Electrical characteristics

5.5 V < VS <18V; RL = 500 Ω; -40°C < Tj < 150°C;

all voltages with respect to ground; positive current flowing into pin; unless otherwise specified.

Parameter

Symbol

Values

Unit Note or Test Condition

Num

ber

Min. Typ. Max.

Current consumption

Current consumption at VS,

Recessive state

IS,rec

0.1

0.6

2.0

mA INH open, without RL;

VTxD =“high”

4.1.1

Current consumption at VS,

Dominate state

IS,dom

0.1

1.1

3.0

mA INH open, without RL;

VTxD =0 V

4.1.2

Current consumption at VS,

Standby mode

IS,standby

100

350

900

µA

Standby mode,

VBUS =VS

4.1.3

Current consumption at VS,

Sleep mode

IS,sleep,typ

110

15

µA

Sleep mode, Tj <40 °C;

VS = 13.5 V; VBUS =VS

4.1.4

Current consumption at VS,

Sleep mode

IS,sleep

110

25

µA

Sleep mode,

VBUS =VS

4.1.5

Current consumption at VS,

Sleep mode.

Bus shorted to GND

IS,SC_GND

100

–

700

µA

Sleep mode,

VS = 13.5 V; VBUS =0 V

4.1.6

Undervoltage detection

Power-on reset level on VS

VS,UV,PON

–

–

4.3

V

Reset level for mode change 4.2.1

Undervoltage threshold, VS on VS,UV,ON

4.7

5.15

5.5

V

Rising edge

4.2.2

Undervoltage threshold, VS off VS,UV,OFF

4.4

4.85

5.2

V

Falling edge

4.2.3

Undervoltage detection

hysteresis

VS,UV,HYS

–

300

–

mV 1)

4.2.4

Undervoltage blanking time

tBLANK,UV

–10

–

µs

1)

4.2.5

Receiver output: RxD

“High” level leakage current

IRD,H,leak

––

5

µA

VRxD = 5 V; VBUS = VS

4.3.1

“Low” level output current

IRD,L

1.3

–

–

mA VRxD = 0.4 V; VBUS = 0 V

4.3.2

Transmission input: TxD

“High” level input voltage

range

VTD,H

2

–

6.0

V

Recessive state

4.4.1

“Low” level input voltage range VTD,L

-0.3

–

0.8

V

Dominant state

4.4.2

Input hysteresis

VTD,hys

–

200

–

mV 1)

4.4.3