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STM32L010K8 Datasheet(PDF) 48 Page - STMicroelectronics |
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STM32L010K8 Datasheet(HTML) 48 Page - STMicroelectronics |
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48 / 92 page ![]() Electrical characteristics STM32L010K8 STM32L010R8 48/92 DS12325 Rev 3 IDD (Sleep) Supply current in Sleep mode, Flash memory ON fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range 3, VCORE =1.2 V, VOS[1:0] = 11 1 57.5 130 µA 284 170 4 150 280 Range 2, CORE =1.5 V, VOS[1:0] = 10 4 170 310 8 315 420 16 605 770 Range 1, VCORE =1.8 V, VOS[1:0] = 01 8 380 460 16 730 950 32 1650 2400 MSI clock Range 3, VCORE =1.2 V, VOS[1:0] = 11 0.065 29.5 110 0.524 44.5 130 4.2 150 270 HSI16 clock source (16 MHz) Range 2, VCORE =1.5 V, VOS[1:0] = 10 16 680 950 Range 1, VCORE =1.8 V, VOS[1:0] = 01 32 1750 2100 1. Guaranteed by characterization results, not tested in production, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). Table 23. Current consumption in Sleep mode (continued) Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit |
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