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STM32L010K8 Datasheet(PDF) 43 Page - STMicroelectronics

Part # STM32L010K8
Description  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0,64-Kbyte Flash memory, 8-Kbyte SRAM, 256-byte EEPROM, ADC
PDF  92 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L010K8 Datasheet(HTML) 43 Page - STMicroelectronics

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STM32L010K8 STM32L010R8
Electrical characteristics
82
6.3.4
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, temperature, I/O pin loading, device software configuration, operating
frequencies, I/O pin switching rate, program location in memory and executed binary code.
The current consumption is measured as described in Figure 8: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code if not specified
otherwise.
The current consumption values are derived from the tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 15: General operating
conditions unless otherwise specified.
VDDCoeff(4)
Voltage coefficient
3.0 V < VDDA < 3.6 V
-
-
2000
ppm/V
TS_vrefint(4)(5)
ADC sampling time when
reading the internal reference
voltage
-5
10
-
µs
TADC_BUF(4)
Startup time of reference
voltage buffer for ADC
--
-
10
µs
IBUF_ADC(4)
Consumption of reference
voltage buffer for ADC
-
-
13.5
25
µA
IVREF_OUT(4)
VREF_OUT output current(6)
--
-
1
µA
CVREF_OUT(4)
VREF_OUT output load
-
-
-
50
pF
ILPBUF(4)
Consumption of reference
voltage buffer for VREF_OUT
-
-
730
1200
nA
VREFINT_DIV1(4) 1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2(4) 1/2 reference voltage
-
49
50
51
VREFINT_DIV3(4) 3/4 reference voltage
-
74
75
76
1. Refer to Table 30: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current
consumption (IREFINT).
2. Guaranteed by test in production.
3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
4. Guaranteed by design, not tested in production.
5. Shortest sampling time can be determined in the application by multiple iterations.
6. To guarantee less than 1% VREF_OUT deviation.
Table 18. Embedded internal reference voltage(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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