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STGB15M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGB15M65DF2
Description  Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB15M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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May 2017
DocID025356 Rev 4
1/19
This is information on a product in full production.
www.st.com
STGB15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss
in a D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGB15M65DF2
G15M65DF2
D²PAK
Tape and reel
1
3
TAB
D²PAK
2


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