STGB15M65DF2_V01 datasheet(4/19 Pages) STMICROELECTRONICS

Part #	STGB15M65DF2

Description	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 19 page

Electrical characteristics

STGB15M65DF2

4/19

DocID025356 Rev 4

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC =

250 μA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 15 A

1.55

2.0

VGE = 15 V, IC = 15 A,

TJ = 125 °C

1.9

VGE = 15 V, IC = 15 A,

TJ = 175 °C

2.1

Forward on-voltage

IF = 15 A

1.7

2.6

IF = 15 A, TJ = 125 °C

1.5

IF = 15 A, TJ = 175 °C

1.4

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 µA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

µA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

1250

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCC = 520 V, IC = 15 A,

VGE = 0 to 15 V

(see Figure 30: " Gate

charge test circuit")

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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