STGB15M65DF2_V01 datasheet(3/19 Pages) STMICROELECTRONICS

Part #	STGB15M65DF2

Description	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 19 page

STGB15M65DF2

Electrical ratings

DocID025356 Rev 4

3/19

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

PTOT

Total dissipation at TC = 25 °C

136

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

- 55 to 175

°C

Notes:

(1)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

1.1

°C/W

RthJC

Thermal resistance junction-case diode

2.08

RthJA

Thermal resistance junction-ambient

62.5

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