UPD6P9 datasheet(29/45 Pages) RENESAS

29 / 45 page

µPD6P9

Data Sheet U15144EJ1V1DS

DC Characteristics (TA = –40 to +85

°C, VDD = 2.2 to 3.6 V)

Item

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input voltage, high

VIH1

KI/O

0.7VDD

VDD

VIH2

KI, S0, S1, S2

0.65VDD

VDD

Input voltage, low

VIL1

KI/O

0.3VDD

VIL2

KI, S0, S1, S2

0.15VDD

Input leakage current,

ILIH1

µA

high

VI = VDD, pull-down resistor not incorporated

ILIH2

S0, S1, S2

µA

VI = VDD, pull-down resistor not incorporated

Input leakage current,

ILIL1

VI = 0 V

–3

µA

low

ILIL2

KI/O

VI = 0 V

–3

µA

ILIL3

S0, S1, S2 VI = 0 V

–3

µA

Output voltage, high

VOH1

REM, LED, KI/O

IOH = –0.3 mA

0.8VDD

Output voltage, low

VOL1

REM, LED

IOL = 0.3 mA

0.3

VOL2

KI/O

IOL = 15

µA

0.4

Output current, high

IOH1

REM

VDD = 3.0 V, VOH = 1.0 V

–5

–9

IOH2

KI/O

VDD = 3.0 V, VOH = 2.2 V

–2.5

–5

Output current, low

IOL1

KI/O

VDD = 3.0 V, VOL = 0.4 V

µA

VDD = 3.0 V, VOL = 2.2 V

100

220

µA

On-chip pull-down resistor

KI, S0, S1, S2

150

300

Ω

KI/O

130

250

500

Ω

Data retention power

VDDOR

In STOP mode

1.2

3.6

supply voltage

RAM retention detection

VID

1.7

1.8

voltage

Supply current

IDD1

Operation

fX = 4.0 MHz, VDD = 3 V

±10%

1.1

2.2

mode

IDD2

HALT mode

fX = 4.0 MHz, VDD = 3 V

±10%

1.0

2.0

IDD3

STOP mode

VDD = 3 V

±10%

2.2

9.5

µA

VDD = 3 V

±10%, TA = 25°C

2.2

3.5

µA

UPD6P9 Datasheet(PDF) 29 Page - Renesas Technology Corp

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