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UPD6P9 Datasheet(PDF) 25 Page - Renesas Technology Corp |
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UPD6P9 Datasheet(HTML) 25 Page - Renesas Technology Corp |
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25 / 45 page ![]() 23 µPD6P9 Data Sheet U15144EJ1V1DS 5. WRITING AND VERIFYING ONE-TIME PROM (PROGRAM MEMORY) The program memory of the µPD6P9 is a one-time PROM of 4074 × 10 bits. To write or verify this one-time PROM, the pins shown in Table 5-1 are used. Note that no address input pin is used. Instead, the address is updated by using the clock input from the CLK pin. Table 5-1. Pins Used to Write/Verify Program Memory Pin Name Function VPP Supplies voltage when writing/verifying program memory. Apply +12.5 V to this pin. VDD Power supply. Supply +6 V to this pin when writing/verifying program memory. CLK Inputs clock to update address when writing/verifying program memory. By inputting a pulse four times to the CLK pin, the address of the program memory is updated. MD0 to MD3 Input to select the operation mode when writing/verifying program memory. D0 to D7 Inputs/outputs 8-bit data when writing/verifying program memory. XIN, XOUT Clock necessary for writing program memory. Connect a 4 MHz ceramic resonator to this pin. 5.1 Operating Mode When Writing/Verifying Program Memory The µPD6P9 is set in the program memory write/verify mode when +6 V is applied to the VDD pin and +12.5 V is applied to the VPP pin after the µPD6P9 has been in the reset status (VDD = 5 V, VPP = 0 V) for a specific time. In this mode, the operating modes shown in Table 5-2 can be set by setting the MD0 through MD3 pins. Connect all the pins other than those shown in Table 5-1 to GND via pull-down resistors. Table 5-2. Setting Operating Mode Setting of Operating Mode Operating Mode VPP VDD MD0 MD1 MD2 MD3 +12.5 V +6 V H L H L Clear program memory address to 0 L HHH Write mode LL HH Verify mode H × HH Program inhibit mode ×: don’t care (L or H) |
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