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SC488 Datasheet(PDF) 10 Page - Semtech Corporation

Part # SC488
Description  Complete DDR1/2/3 Memory Power Supply
PDF  24 Pages
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Manufacturer  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC488 Datasheet(HTML) 10 Page - Semtech Corporation

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© 2006 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC488
Referencing Figure 2, the equation for setting the output
voltage is:
1
R2
R3
+
1.5
Vout
⎛⎜
⎞⎟
Current Limit Circuit
Current limiting of the SC488 can be accomplished in two
ways. The on-state resistance of the low-side MOSFETs
can be used as the current sensing element, or a sense
resistor in the low-side source can be used if greater ac-
curacy is desired. RDSON sensing is more efficient and
less expensive. In both cases, the R
ILIM resistor between
the ILIM pin and LX sets the over-current threshold. This
resistor R
ILIM is connected to a 10μA current source within
the SC488 which is turned on when the low-side MOSFET
turns on. When the voltage drop across the sense resistor
or low-side MOSFET equals the voltage across the R
ILIMresis-
tor, current limit will activate. The high-side MOSFET will
not be allowed to turn on until the voltage drop across the
sense element (resistor or MOSFET) falls below the voltage
across the R
ILIM resistor.
The current sensing circuit actually regulates the inductor
valley current, see Figure 3. This means that if the current
limit is set to 10A, the peak current through the inductor
would be 10A plus the peak ripple current, and the average
current through the inductor would be 10A plus 1/2 the
peak-to-peak ripple current.
I LIMIT
I LOAD
IPEAK
TIME
Valley Current - Limit Threshold Point
Figure 3
Application Information
The schematic of RDS
ON sensing circuit is shown in Figure
4 with R
ILIM = R1 and RDSON of Q2.
D1
Vout
+5V
+VIN
L1
+
C1
Q2
+
C3
D2
R1
PGND
DL
VDDP
ILIM
LX
DH
BST
C2
Q1
SC488
Figure 4
Similarly, for resistor sensing, the current through the lower
MOSFET and the source sense resistor develops a voltage
that opposes the voltage developed across R
ILIM. When the
voltage developed across the R
SENSE resistor reaches voltage
drop across R
ILIM, an over-current exists and the high-side
MOSFET will not be allowed to turn on. The over-current
equation when using an external sense resistor is:
SENSE
R
ILIM
R
A
10
Valley
OC
IL
Schematic of resistor sensing circuit is shown in Figure 5
with R
ILIM = R1 and RSENSE = R4.
Q1
Q2
+
C1
Vout
D1
R1
+5V
L1
+
C3
R4
D2
PGND
DL
VDDP
ILIM
LX
DH
BST
+VIN
C2
SC488
Figure 5



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