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BQ3285ECSS Datasheet(PDF) 17 Page - Texas Instruments |
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BQ3285ECSS Datasheet(HTML) 17 Page - Texas Instruments |
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17 / 26 page  17 bq3285EC/LC July 1996 Read/Write Timing—bq3285EC (T A =TOPR,VCC =5V ± 10%) Symbol Parameter Minimum Typical Maximum Unit Notes tCYC Cycle time 160 - - ns tDSL DS low or RD/WR high time 80 - - ns tDSH DS high or RD/WR low time 55 - - ns tRWH R/W hold time 0 - - ns tRWS R/W setup time 10 - - ns tCS Chip select setup time 5 - - ns tCH Chip select hold time 0 - - ns tDHR Read data hold time 0 - 25 ns tDHW Write data hold time 0 - - ns tAS Address setup time 20 - - ns tAH Address hold time 5 - - ns tDAS Delay time, DS to AS rise 10 - - ns tASW Pulse width, AS high 30 - - ns tASD Delay time, AS to DS rise (RD/WR fall) 35 - - ns tOD Output data delay time from DS rise (RD fall) - - 50 ns tDW Write data setup time 30 - - ns tBUC Delay time before update cycle - 244 - µs tPI Periodic interrupt time interval ---- See Table 3 tUC Time of update cycle - 1 - µs |
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