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BQ3285ECSS Datasheet(PDF) 18 Page - Texas Instruments |
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BQ3285ECSS Datasheet(HTML) 18 Page - Texas Instruments |
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18 / 26 page  18 bq3285EC/LC July 1996 Read/Write Timing—bq3285LC (T A =TOPR,VCC =3V ± 10%) Symbol Parameter Minimum Typical Maximum Unit Notes tCYC Cycle time 270 - - ns tDSL DS low or RD/WR high time 135 - - ns tDSH DS high or RD/WR low time 90 - - ns tRWH R/W hold time 0 - - ns tRWS R/W setup time 15 - - ns tCS Chip select setup time 8 - - ns tCH Chip select hold time 0 - - ns tDHR Read data hold time 0 - 40 ns tDHW Write data hold time 0 - - ns tAS Address setup time 30 - - ns tAH Address hold time 15 - - ns tDAS Delay time, DS to AS rise 15 - - ns tASW Pulse width, AS high 50 - - ns tASD Delay time, AS to DS rise (RD/WR fall) 55 - - ns tOD Output data delay time from DS rise (RD fall) - - 100 ns tDW Write data setup time 50 - - ns tBUC Delay time before update cycle - 244 - µs tPI Periodic interrupt time interval ---- See Table 3 tUC Time of update cycle - 1 - µs |
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