MCP662-ESLASHMF datasheet(4/42 Pages) MICROCHIP

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MCP661/2/3/5

DS22194A-page 4

TABLE 1-2:

AC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM =VDD/2,

VOUT ≈ VDD/2, VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS =VSS (refer to Figure 1-2).

Parameters

Sym

Min

Typ

Max

Units

Conditions

AC Response

Gain Bandwidth Product

GBWP

—

MHz

Phase Margin

—

G = +1

Open Loop Output Impedance

ROUT

—10

—

AC Distortion

Total Harmonic Distortion plus Noise

THD+N

—

0.003

—

G = +1, VOUT = 2VP-P, f = 1 kHz,

VDD = 5.5V, BW = 80 kHz

Differential Gain, Positive Video (Note 1)

—

0.3

—

NTSC, VDD = +2.5V, VSS = -2.5V,

G = +2, VL = 0V, DC VIN = 0V to 0.7V

Differential Gain, Negative Video (Note 1)

—

0.3

—

NTSC, VDD = +2.5V, VSS = -2.5V,

G = +2, VL = 0V, DC VIN = 0V to -0.7V

Differential Phase, Positive Video (Note 1)

—

0.3

—

NTSC, VDD = +2.5V, VSS = -2.5V,

G = +2, VL = 0V, DC VIN = 0V to 0.7V

Differential Phase, Negative Video (Note 1)

—

0.9

—

NTSC, VDD = +2.5V, VSS = -2.5V,

G = +2, VL = 0V, DC VIN = 0V to -0.7V

Step Response

Rise Time, 10% to 90%

—

G = +1, VOUT = 100 mVP-P

Slew Rate

—

V/µs

G = +1

Noise

Input Noise Voltage

Eni

—14

—

µVP-P f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

eni

—6.8

—

nV/

√Hz f = 1 MHz

Input Noise Current Density

ini

4—

fA/

√Hz f = 1 kHz

Note 1:

These specifications are described in detail in Section 4.3 “Distortion”.

TABLE 1-3:

DIGITAL ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,

VOUT ≈ VDD/2, VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS =VSS (refer to Figure 1-1 and Figure 1-2).

Parameters

Sym

Min

Typ

Max

Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

VIL

VSS

—0.2VDD

CS Input Current, Low

ICSL

—

-0.1

—

CS = 0V

CS High Specifications

CS Logic Threshold, High

VIH

0.8VDD

VDD

CS Input Current, High

ICSH

—-0.7—

µA

CS = VDD

GND Current

ISS

-2

-1

—µA

CS Internal Pull Down Resistor

RPD

—5—

Amplifier Output Leakage

IO(LEAK)

—40—

CS = VDD, TA = +125°C

CS Dynamic Specifications

CS Input Hysteresis

VHYST

—

0.25

—

CS High to Amplifier Off Time

(output goes High-Z)

tOFF

—

200

—

G = +1 V/V, VL = VSS

CS = 0.8VDD to VOUT = 0.1(VDD/2)

CS Low to Amplifier On Time

tON

—2

µs

G = +1 V/V, VL = VSS,

CS = 0.2VDD to VOUT = 0.9(VDD/2)

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