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STW54NM65N Datasheet(PDF) 1 Page - STMicroelectronics |
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STW54NM65N Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() January 2009 Rev 2 1/12 12 STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh™ II Power MOSFET TO-247 Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A TO-247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STW54NM65N 54NM65N TO-247 Tube www.st.com Obsolete Product(s) - Obsolete Product(s) |
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