STW54NM65N datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW54NM65N

4/12

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS = 0

650

dv/dt (1)

Characteristic value at turn off on inductive load

Drain source voltage slope

VDD= 520 V, ID = 50 A,

VGS =10 V

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, @125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 25 A

0.054 0.065

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS=15 V, ID = 25 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

6000

320

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 520 V

690

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 50 A,

VGS = 10 V,

(see Figure 15)

200

110

Gate input resistance

f=1 MHz gate DC bias=0

Test signal level = 20 mV

open drain

1.9

Ω

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