STW54NM65N datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STW54NM65N

Description	N-channel 650 V, 0.054 OHM, 50 A MDmesh II Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

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STW54NM65N

Electrical characteristics

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 325 V, ID = 25 A

RG =4.7 Ω VGS = 10 V

(see Figure 14)

240

100

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

200

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 50 A, VGS = 0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 16)

630

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 16)

750

µC

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