STW54NM65N datasheet(3/12 Pages) STMICROELECTRONICS

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STW54NM65N

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

31.5

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

200

PTOT

Total dissipation at TC = 25°C

350

dv/dt (2)

ISD ≤ 50 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

–55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.36

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID= IAS, VDD = 50 V)

1600

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