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TGS2353 Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGS2353 Datasheet(HTML) 3 Page - TriQuint Semiconductor |
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3 / 10 page ![]() TGS2353 DC – 18 GHz High Power SPDT Switch Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of carrier (die mounted to a 20 mil CuMo carrier using 1.5 mil 80/20 AuSn) Tbase = 70 °C θJC = 8.4 °C/W Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 70 °C, Vc1 = 0 V, Vc2 = -40 V, Pin = 10 W, Pdiss = 2.9 W Tch = 94.5 °C Tm = 1.8 E+10 Hours 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12 1.E+13 1.E+14 1.E+15 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, Tch (°C) Median Lifetime (Tm) vs. Channel Temperature (Tch) FET7 Preliminary Data Sheet: Rev A 06/20/11 - 3 of 10 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® |
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