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RFAM2790 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFAM2790
Description  Integrated Amplifier
PDF  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFAM2790 Datasheet(HTML) 3 Page - RF Micro Devices

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RFAM2790
DS121001
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Application Circuit
Attenuator
V+ = 12V; TMB = 30°C; ZS = ZL = 75
Attenuator Range
0 to 20
dB
Attenuator Voltage 0V to 12V
Power Enable/Disable
Amp enabled
Logic high (3.3V) applied to power enable
pin[3]
Amp disabled
Logic low (0V) applied to power enable pin[4]
[1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
[2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite second order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite triple beat (CTB) - The CTB parameter is defined by the NCTA.
Cross modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation
of the carrier being tested.
carrier to intermodulation noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
[3] Logic high is defined as power enable voltage >2V
[4] Logic low is defined as power enable voltage <0.4V
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
C4
4.7nF
C2
4.7nF
C1
DNI
D2
MM3Z5V6T1
R1
10k
D3
TGL34-33A
C3
4.7nF
C5
4.7nF
C7
DNI
D1
TQP200002
25V
FB1
Bead 60
T1
RFXF0006
T2
RFXF0008
V+
RF INPUT
RF OUTPUT
1
2
3
4
5
6
7
8
9
C6
4.7nF
Power
Enable
Att.
Adjust
GND
U1
RFAM2790
C9
4.7nF
C8
4.7nF
D4
TQP200002
25V
T3
RFXF0009



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