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RFAM2790 Datasheet(PDF) 3 Page - RF Micro Devices |
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RFAM2790 Datasheet(HTML) 3 Page - RF Micro Devices |
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3 / 6 page ![]() 3 of 6 RFAM2790 DS121001 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Application Circuit Attenuator V+ = 12V; TMB = 30°C; ZS = ZL = 75 Attenuator Range 0 to 20 dB Attenuator Voltage 0V to 12V Power Enable/Disable Amp enabled Logic high (3.3V) applied to power enable pin[3] Amp disabled Logic low (0V) applied to power enable pin[4] [1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. [2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite second order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite triple beat (CTB) - The CTB parameter is defined by the NCTA. Cross modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). [3] Logic high is defined as power enable voltage >2V [4] Logic low is defined as power enable voltage <0.4V Parameter Specification Unit Condition Min. Typ. Max. C4 4.7nF C2 4.7nF C1 DNI D2 MM3Z5V6T1 R1 10k D3 TGL34-33A C3 4.7nF C5 4.7nF C7 DNI D1 TQP200002 25V FB1 Bead 60 T1 RFXF0006 T2 RFXF0008 V+ RF INPUT RF OUTPUT 1 2 3 4 5 6 7 8 9 C6 4.7nF Power Enable Att. Adjust GND U1 RFAM2790 C9 4.7nF C8 4.7nF D4 TQP200002 25V T3 RFXF0009 |
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