1 of 6

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

SOI

POWER ENABLE

INPUT

OUTPUT

Preamp

Driver

V+

ATTENUATOR

ADJUST

RFAM2790

45MHz to 1003MHz GaAs Edge QAM

Integrated Amplifier

The RFAM2790 is an integrated edge QAM amplifier module. The part employs

GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power

enable feature, has high output capability, and is operated from 45MHz to

1003MHz. It provides excellent linearity and superior return loss performance with

low noise and optimal reliability.

Features



Excellent Linearity



Extremely High Output Capability



Voltage Controlled Attenuator



Power Enable Feature



Optimal Reliability



Low Noise



Unconditionally Stable Under all

Terminations



27dB Typical Gain at 1003MHz



Applications



45MHz to 1003MHz

Downstream Edge QAM RF

Modulators



Headend Equipment

DS121001





Package: 9-pin, 11.0mm x 11.0mm x 1.375mm

RFAM2790

45MHz to

1003MHz

GaAs Edge

QAM Inte-

grated Ampli-

fier

RFAM2790SB

Sample bag with 5 pieces

RFAM2790SR

7" Reel with 100 pieces

RFAM2790TR7

7" Reel with 250 pieces

RFAM2790TR13

13" Reel with 750 pieces

RFAM2790PCBA-410 Fully Assembled Evaluation Board