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STFU15NM65N Datasheet(PDF) 1 Page - STMicroelectronics |
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STFU15NM65N Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() September 2015 DocID027631 Rev 2 1/12 This is information on a product in full production. www.st.com STFU15NM65N N- channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STFU15NM65N 650 V 0.38 Ω 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STFU15NM65N 15NM65N TO-220FP ultra narrow leads Tube TO-220FP ultra narrow leads 1 2 3 |
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